silicon rf power semiconductors ra30h3340m rohs compliance , 330-400mhz 30w 12.5v, 3 stage amp. for mobile radio ra30h3340m 24 jun 2010 1/8 electrostatic sensitive device observe handling precautions description the ra30h3340m is a 30-watt rf mosfet amplifier module for 12.5-volt mobile radios that operate in the 330- to 400-mhz range. the battery can be connected dire ctly to the drain of the enhancement-mode mosfet transistors. without the gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal a ttenuates up to 60 db. the output power and drain current increase as the gate voltage increases. with a gate voltage around 4.0v (minimum), output power and drain current increases substant ially. the nominal output power becomes available at 4.5v (t ypical) and 5v (maximum). at v gg =5v, the typical gate current is 1 ma. this module is designed for non-linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement-mode mosfet transistors (i dd ? 0 @ v dd =12.5v, v gg =0v) ? p out >30w, t >40% @ v dd =12.5v, v gg =5v, p in =50mw ? broadband frequency range: 330-400mhz ? low-power control current i gg =1ma (typ) at v gg =5v ? 66 x 21 x 9.8 mm ? linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power rohs compliance ? RA30H3340M-101 is a rohs compliant products. ? rohs compliance is indicate by the letter ?g? after the lot marking. ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. how ever,it is applicable to the followi ng exceptions of rohs directions. 1.lead in the glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form RA30H3340M-101 antistatic tray, 10 modules/tray 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) block diagram 2 4 1 5 3 package code: h2s
silicon rf power semiconductors rohs compliance ra30h3340m ra30h3340m 24 jun 2010 2/8 electrostatic sensitive device observe handling precautions maximum ratings (t case =+25c, unless otherwise specified) symbol parameter conditions rating unit v dd drain voltage v gg <5v 17 v v gg gate voltage v dd <12.5v, p in =0mw 6 v p in input power 100 mw p out output power 45 w t case(op) operation case temperature range f=330-400mhz, z g =z l =50 ? -30 to +110 c t stg storage temperature range -40 to +110 c above parameters are guaranteed independently electrical characteristics (t case =+25c, z g =z l =50 ? , unless otherwise specified) symbol parameter conditions min typ max unit f frequency range 330 - 400 mhz p out output power 30 - - w t total efficiency 40 - - % 2f o 2 nd harmonic - - -25 dbc in input vswr - - 3:1 ? i gg gate current v dd =12.5v, v gg =5v, p in =50mw - 1 - ma ? stability v dd =10.0-15.2v, p in =25-70mw, p out <40w (v gg control), load vswr=3:1 no parasitic oscillation ? ? load vswr tolerance v dd =15.2v, p in =50mw, p out =30w (v gg control), load vswr=20:1 no degradation or destroy ? all parameters, conditions, ratings and limi ts are subject to change without notice
silicon rf power semiconductors rohs compliance ra30h3340m ra30h3340m 24 jun 2010 3/8 electrostatic sensitive device observe handling precautions typical performance (t case =+25c, z g =z l =50 ? , unless otherwise specified) output power, total efficiency, output power and total efficiency and input vswr versus frequency versus input power 0 10 20 30 40 50 60 320 330 340 350 360 370 380 390 400 410 frequency f(mhz) output power p out (w) input vswr in 0 20 40 60 80 100 120 total efficiency t (%) v dd =12.5v, v gg =5v, p in =50mw p out j o t 30 35 40 45 50 -10-5 0 5 101520 input power pin(dbm) output power pout (dbm) 0 20 40 60 80 100 total efficiency y t(%) pout t f ==330mhz, vdd=12.5v , vgg=5v output power and efficiency output power and efficiency output power and efficiency output power and efficiency output power and efficiency versus gate voltage output power and efficiency versus gate voltage versus input power versus input power versus drain voltage versus gate voltage 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 16 18 drain supply voltage v dd (v) output power p out (w) 0 20 40 60 80 100 120 140 total efficiency t (%) f =330/365/400mhz, v gg =5v, p in =50mw 1 p v u 5 y : 330mhz y : 365mhz - - - - - y :400mhz 0 10 20 30 40 50 60 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gate voltage v gg (v) output power p out (w) 0 20 40 60 80 100 120 totl efficiency t (%) f =330mhz, v dd =12.5v, p in =50mw 1 p v u 5 0 10 20 30 40 50 60 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gate voltage v gg (v) output power p out (w) 0 20 40 60 80 100 120 total efficiency t (%) f =365mhz v dd =12.5v, p in =50mw 1 p v u & |